On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
نویسندگان
چکیده
The effectiveness of a method for analytically reducing the effect of trapping centers on photoconductance-based recombination lifetime measurements in silicon is examined. The correction method involves the use of a ‘‘bias-light’’ term to subtract out the underlying photoconductance due to the traps. The technique extends, by approximately an order of magnitude, the range of carrier densities over which reasonably accurate ~within 30%! measurements of the recombination lifetime can be made. Guidelines for determining which bias-light intensity will produce the best correction for solar grade multicrystalline silicon wafers, and the range over which it is valid, are developed for several practical cases. © 2001 American Institute of Physics. @DOI: 10.1063/1.1346652#
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